Uniformity study of amorphous and microcrystalline silicon thin films deposited on 10 cm × 10 cm glass substrate using hot wire CVD technique
نویسندگان
چکیده
منابع مشابه
Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate
Amorphous and nanocrystalline silicon films obtained by Hot-Wire Chemical Vapor deposition have been incorporated as active layers in n-type coplanar top gate thin film transistors deposited on glass substrates covered with SiO2. Amorphous silicon devices exhibited mobility values of 1.3 cmVs, which are very high taking into account the amorphous nature of the material. Nanocrystalline transist...
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ژورنال
عنوان ژورنال: physica status solidi (c)
سال: 2010
ISSN: 1862-6351,1610-1642
DOI: 10.1002/pssc.200982827